MWE6IC9080NR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MWE6IC9080NR1, RF LDMOS Wideband Integrated Power Amplifiers

6.8 pF Chip Capacitors 4.7 pF Chip Capacitors 33 pF Chip Capacitors 4.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors, Radial 0.1 pF Chip Capacitor 1.0 pF Chip Capacitor 4.12 KΩ, 1/4 W Chip Resistors 0.030″, εr = 2.8 Part Number ATC100B6R8CT500XT ATC100B4R7CT500X

Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev.

0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on chip matching that makes it usable from 865 to 960 MHz.

This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80

MWE6IC9080NR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source Scattering Parameters

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

* In