AOB210L - 30V N-Channel MOSFET

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Datasheet Details

The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 105A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics.

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Published: Jan 11, 2014 |