AOB11S65 - Power Transistor

Freescale

AOB11S65 Datasheet Preview — Preview of AOB11S65 PDF

Datasheet Details

Part number	AOB11S65
Manufacturer	Freescale
File Size	597.17 KB
Description	Power Transistor
Datasheet	AOB11S65_Freescale.pdf

AOB11S65 Product details

Description

The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Features

VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G C TC=25° Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum le.

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Published: Jan 11, 2014 |