AOB1100L Datasheet - INCHANGE

AOB1100L, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOB1100L

Features

* Drain Current
* ID= 130A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 11.7mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pluse 208 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Operating Junction Temper

AOB1100L-INCHANGE.pdf