AOB10N60 Datasheet - INCHANGE

AOB10N60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOB10N60

Features

* Drain Current
* ID=10A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 36 A PD Total Dissipation @TC=25℃ 250 W TJ Max.
Operating Junction Temperat

AOB10N60-INCHANGE.pdf