11N60E Datasheet - Fuji Electric

11N60E FMV11N60E

Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode .

11N60E Features

* Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS) Applications

11N60E-FujiElectric.pdf