Datasheet4U Logo Datasheet4U.com

2SK1940

N-channel MOS-FET

2SK1940 Features

* High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 0,75Ω 12A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings

2SK1940 Datasheet (211.13 KB)

Preview of 2SK1940 PDF

Datasheet Details

Part number:

2SK1940

Manufacturer:

Fuji Electric

File Size:

211.13 KB

Description:

N-channel mos-fet.

📁 Related Datasheet

2SK1940 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L.

2SK1940-01 - N-channel MOS-FET (Fuji Electric)
2SK1940-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK1940-01 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L.

2SK1941 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.

2SK1941-01R - N-channel MOS-FET (Fuji Electric)
2SK1941-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK1942 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK1942-01 - N-channel MOS-FET (Fuji Electric)
2SK1942-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK1942-01 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.

TAGS

2SK1940 N-channel MOS-FET Fuji Electric

Image Gallery

2SK1940 Datasheet Preview Page 2

2SK1940 Distributor