2SK2769-01MR Datasheet, Mos-fet, Fuji Electric

2SK2769-01MR Features

  • Mos-fet High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 900V 5,5Ω 3,5A 40W >

PDF File Details

Part number:

2SK2769-01MR

Manufacturer:

Fuji Electric

File Size:

337.17kb

Download:

📄 Datasheet

Description:

N-channel mos-fet.

Datasheet Preview: 2SK2769-01MR 📥 Download PDF (337.17kb)
Page 2 of 2SK2769-01MR

2SK2769-01MR Application

  • Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Rat

TAGS

2SK2769-01MR
N-channel
MOS-FET
Fuji Electric

📁 Related Datasheet

2SK2760-01 - N-channel MOS-FET (Fuji Electric)
2SK2760-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2761 - N-channel MOS-FET (Fuji Electric)
2SK2761-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

2SK2761-01MR - N-channel MOS-FET (Fuji Electric)
2SK2761-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.

2SK2762 - Power MOSFET (Fuji Electric)
.

2SK2762-01L - Power MOSFET (Fuji Electric)
.

2SK2762-01S - Power MOSFET (Fuji Electric)
.

2SK2763-01 - N-channel MOS-FET (Fuji Electric)
2SK2763-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2764-01R - N-channel MOS-FET (Fuji Electric)
2SK2764-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

2SK2765 - N-channel MOS-FET (Fuji Electric)
2SK2765-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

2SK2765-01 - N-channel MOS-FET (Fuji Electric)
2SK2765-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts