ESAC25M-04D
Fuji Electric
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Fuji silicon diode specification.
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ESAC25M-04C - FUJI SILICON DIODE SPECIFICATION
(Fuji Electric)
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ESAC25M-04N - FUJI SILICON DIODE SPECIFICATION
(Fuji Electric)
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ESAC25M-02C - FUJI SILICON DIODE SPECIFICATION
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ESAC25M-02D - FUJI SILICON DIODE SPECIFICATION
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ESAC25M-02N - FUJI SILICON DIODE SPECIFICATION
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ESAC25 - FAST RECOVERY DIODE
(Fuji Electric)
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://.collmer.
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ESAC25-02 - FAST RECOVERY DIODES
(EIC)
ESAC25(C,N,D)
PRV : 200 - 400 Volts Io : 10 Amperes
FEATURES :
* High voltage by mesa design * High High speed switching * High reliability
* Pb / R.
ESAC25-02C - Ultrafast Rectifier
(INCHANGE)
Ultra fast Rectifier
INCHANGE Semiconductor
ESAC25-02C
FEATURES ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage, h.
ESAC25-02C - Fast Recovery Half Bridge Rectifier
(Thinki Semiconductor)
ESAC25-02C thru ESAC25-06C
®
Pb ESAC25-02C/ESAC25-04C/ESAC25-06C Pb Free Plating Product
10 Ampere Heatsink Dual Common Cathode Fast Recovery Half B.
ESAC25-02C - FAST RECOVERY DIODES
(EIC)
ESAC25(C,N,D)
PRV : 200 - 400 Volts Io : 10 Amperes
FEATURES :
* High voltage by mesa design * High High speed switching * High reliability
* Pb / R.