FGW75N65W Discrete IGBT

Fuji Electric

Description

FGW75N65W http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 75A .
Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current Gate-Emitter Thresh.

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Datasheet Specifications

Part number: FGW75N65W
Manufacturer: Fuji Electric
File Size: 571.74 KB
Datasheet: FGW75N65W-Fuji.pdf
Description: Discrete IGBT

Applications

* Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector

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