FGW75N65W Datasheet - Fuji Electric

FGW75N65W Discrete IGBT

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = ±20V VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75A .

FGW75N65W Features

* Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Col

FGW75N65W-Fuji.pdf