FGW75N65WE Datasheet - Fuji Electric

FGW75N65WE Discrete IGBT

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75.

FGW75N65WE Features

* Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Col

FGW75N65WE-Fuji.pdf