Datasheet Details
| Part number | FGW75N65WE |
|---|---|
| Manufacturer | Fuji ↗ Electric |
| File Size | 642.81 KB |
| Description | Discrete IGBT |
| Datasheet |
 FGW75N65WE-Fuji.pdf
|
| Part number | FGW75N65WE |
|---|---|
| Manufacturer | Fuji ↗ Electric |
| File Size | 642.81 KB |
| Description | Discrete IGBT |
| Datasheet |
FGW75N65WE-Fuji.pdf
|
Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 75A Turn-On Delay Time Rise Ti
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