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FMP03N60E N-CHANNEL SILICON POWER MOSFET

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Description

FMP03N60E Super FAP-E3 series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repe.

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Datasheet Specifications

Part number
FMP03N60E
Manufacturer
Fuji Electric
File Size
582.90 KB
Datasheet
FMP03N60E_FujiElectric.pdf
Description
N-CHANNEL SILICON POWER MOSFET

Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMP03N60E Distributors

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