FMP06N60ES N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Description

FMP06N60ES Super FAP-E3S series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Rep.

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Datasheet Specifications

Part number: FMP06N60ES
Manufacturer: Fuji Electric
File Size: 548.82 KB
Datasheet: FMP06N60ES_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMP06N60ES Distributors

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FMP06N60ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

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