TS802C09
Fuji Electric
66.99kb
Schottky barrier diode.
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📁 Related Datasheet
TS802C04 - SCHOTTKY BARRIER DIODE
(Fuji Electric)
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://.collmer.
.
TS802C06 - SCHOTTKY BARRIER DIODE
(Fuji Electric)
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://.collmer.
.
TS80210N - Broadband SPDT GaN RF Switch
(Tagore)
TS80210N - 50W CW, Broadband SPDT GaN RF Switch
1.0 Features
• Low insertion loss: 0.5dB @ 4GHz • High isolation: 42dB @ 0.8GHz, 20dB @ 4GHz • 50W CW,.
TS8023N - Broadband SPDT GaN RF Switch
(Tagore)
TS8023N - 100W CW, Broadband SPDT GaN RF Switch
TS8023N
1.0 Features
Low insertion loss: 0.5dB @ 4GHz High isolation: 42dB @ 1.0GHz, 27dB @ 3.5G.
TS80000 - High Efficiency Transmitter Controller
(Semtech)
TS80000
High Efficiency Transmitter Controller for Wireless Power Systems
TRIUNE PRODUCTS
Features
• Supports Qi®, PMA and proprietary charging app.
TS80002 - High-Efficiency Transmit Controller
(Semtech)
POWER MANAGEMENT
TS80002
High-Efficiency Transmit Controller for Wireless Power Systems
Features
Supports portable wireless charging applications .
TS80003 - High Efficiency Transmitter Controller
(Semtech)
DC Supply
TS80003 +
TS61002
Data Transfer
TS81000 +
TS51111
App. MCU
Power Transfer
Transmitter
Receiver
Load.
TS8043N - Broadband SP4T GaN RF Switch
(Tagore)
TS8043N - 100W CW, Broadband SP4T GaN RF Switch
1.0 Features
Low insertion loss: 0.37dB @ 1GHz High isolation: 45dB @ 400MHz, 36dB @ 1GHz 100W C.
TS805C04 - SCHOTTKY BARRIER DIODE
(Fuji Electric)
For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://.collmer.
.
TS805C06 - SCHOTTKY BARRIER DIODE
(Fuji Electric)
TS805C06 (20A)
SCHOTTKY BARRIER DIODE
K-Pack(L)
10 +0.5
(60V / 20A )
Outline drawings, mm
0.9 ±0.3
4.5 ±0.2 1.32
1.5 Max
9.3 ±0.5
1.2 ±0.2 5.08
.
