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CS101

Standard Cell

CS101 Features

* Technology : 90 nm Si gate CMOS 7- to 10-metal layers. Low-K (low permittivity) material is used for all dielectric inter-layers. Three different types of core transistors (low leak, standard, and high speed) can be used on the same chip. The design rules comply with industry standard proc

CS101 General Description

CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three types of core transistors with a different threshold voltage can be mixed accordi.

CS101 Datasheet (129.14 KB)

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Datasheet Details

Part number:

CS101

Manufacturer:

Fujitsu Media Devices

File Size:

129.14 KB

Description:

Standard cell.

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CS101 Standard Cell Fujitsu Media Devices

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