CS1010EA8 Datasheet - Huajing Microelectronics

CS1010EA8, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1010E A8 ○R General .
CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Details

Part number:

CS1010EA8

Manufacturer:

Huajing Microelectronics

File Size:

414.67 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Cur

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CS1010EA8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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