CS1010EA8 - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS1010EA8
Manufacturer	Huajing Microelectronics
File Size	414.67 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1010EA8 Datasheet
Additional preview pages of the CS1010EA8 datasheet.

Product details

Description

CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low ON Resistance(Rdson≤12mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test VDSS ID PD (TC=25℃) RDS(ON)Typ 60 V 120 A 230 W 7.5 mΩ.

📁 Similar Datasheet

CS101 - Standard Cell (Fujitsu Media Devices)
CS10150CT-A - Super Low Barrier High Voltage Power Rectifier (CITC)
CS1018 - HALL-EFFECT SWITCH (Micro Electronics)
CS10-12.000MABJTR - Surface Mount Crystals (Citizen)
CS10-12.288MABJTR - Surface Mount Crystals (Citizen)
CS10-12.500MABJTR - Surface Mount Crystals (Citizen)
CS10-13.560MABJTR - Surface Mount Crystals (Citizen)
CS10-14.31818MABJTR - Surface Mount Crystals (Citizen)

Other Datasheets by Huajing Microelectronics

CS100N03B4 - Silicon N-Channel Power MOSFET
CS100N03B8 - Silicon N-Channel Power MOSFET
CS100N03FB9 - Silicon N-Channel Power MOSFET
CS10N50A8R - Silicon N-Channel Power MOSFET
CS10N50FA9R - Silicon N-Channel Power MOSFET
CS10N60A8HD - Silicon N-Channel Power MOSFET

Published: Jan 30, 2019 |