Click to expand full text
Silicon N-Channel Power MOSFET
CS100N03 B8
○R
General Description：
CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
30 100 100 4.0
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching
circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the
RoHS standard.
Features：
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test
Applications：
UPS,DC Motor Control and Class D Amplifier.
CS100N03B8 Datasheet
