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CS100N03B8

Silicon N-Channel Power MOSFET

CS100N03B8 Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Sym

CS100N03B8 General Description

CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.0 switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS100N03B8 Datasheet (720.75 KB)

Preview of CS100N03B8 PDF

Datasheet Details

Part number:

CS100N03B8

Manufacturer:

Huajing Microelectronics

File Size:

720.75 KB

Description:

Silicon n-channel power mosfet.

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CS100N03B8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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