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CS100N03B8-1 - Silicon N-Channel Power MOSFET

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Part number CS100N03B8-1
Manufacturer CR Micro
File Size 380.04 KB
Description Silicon N-Channel Power MOSFET
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Description

CS100N03 B8-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD RDS(ON)Typ 30 100 90 4 V A W mΩ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is TO-220AB, which accords with the RoHS standard.

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