CS100N03B8-1 Datasheet - CR Micro

CS100N03B8-1 Silicon N-Channel Power MOSFET

CS100N03 B8-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID（Silicon limited current） PD RDS(ON)Typ 30 100 90 4 V A W mΩ performance and enhance the avalanche energy. This device is suitab.

CS100N03B8-1 Features

* l Fast Switching l Low ON Resistance(Rdson≤6 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 P

CS100N03B8-1-CRMicro.pdf