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Silicon N-Channel Power MOSFET
○R
CS100N03 B8-1
General Description：
CS100N03 B8-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID（Silicon limited current） PD RDS(ON)Typ
30 100 90
4
V A W mΩ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤6 mΩ) l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS100N03B8-1 Datasheet
