CS100N06A4 Datasheet - CR Micro

CS100N06A4 Silicon N-Channel Power MOSFET

CS100N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-25.

CS100N06A4 Features

* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 60 V 100 A 60 A 130.2 W 5.6 mΩ Applications： Power switch circuit of adaptor and charger. Absol

CS100N06A4-CRMicro.pdf