CS100N06D3 Datasheet - CR Micro

CS100N06D3 Silicon N-Channel Power MOSFET

CS100N06 D3 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS100N06D3 Features

* Fast Switching

* Low ON Resistance (Rdson≤10mΩ)

* Low Gate Charge (Typical Data: 88.8nC)

* Low Reverse transfer capacitances(Typical:220pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherw

CS100N06D3-CRMicro.pdf