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CS100N06A8 Datasheet - CR Micro

CS100N06A8 Silicon N-Channel Power MOSFET

CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench VDSS ID（Silicon limited current） RDS(ON)Typ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch.

CS100N06A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Motor drive、power tools 60 V 90 A 6.5 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD

CS100N06A8-CRMicro.pdf

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Datasheet Details

Part number:

CS100N06A8

Manufacturer:

CR Micro

File Size:

462.01 KB

Description:

Silicon n-channel power mosfet.

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CS100N06A8 CS100N06A8 Silicon N-Channel Power MOSFET CR Micro

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