CS10N50A8R Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS10N50 A8R ○R General .
CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.

📥 Download Datasheet

CS10N50A8R Datasheet Preview — Preview of CS10N50A8R PDF

Datasheet Specifications

Part number: CS10N50A8R
Manufacturer: Huajing Microelectronics
File Size: 266.45 KB
Datasheet: CS10N50A8R-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gat

CS10N50A8R Distributors

📁 Related Datasheet

CS10N045AE-G CS10N06BE-G CS10N15A3 CS10N15A4 CS10N40A4R CS10N40A8R

📌 All Tags

CS10N50A8R Silicon N-Channel Power MOSFET Huajing Microelectronics

Huajing Microelectronics CS10N50A8R-like datasheet