CS10N50A8R - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS10N50A8R
Manufacturer: Huajing Microelectronics
File Size: 266.45 KB
Datasheet: CS10N50A8R-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS10N50A8R Product details

Description

CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 10 130 0.5 l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.4pF) l 100% Single Pulse avalanche energy Test.

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