CS10N50A8R Datasheet, Mosfet, Huajing Microelectronics

CS10N50A8R Features

• Mosfet l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 10 130 0.5 l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.4p

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CS10N50A8R

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS10N50A8R Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS10N50A8R

Huajing Microelectronics

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