CS10N40A4R Datasheet - CR Micro

CS10N40A4R Silicon N-Channel Power MOSFET

CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS10N40A4R Features

* Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 V 10 A 100 W 0.44 Ω

* Low ON Resistance(Rdson≤0.55Ω)

* Low Gate Charge (Typical Data:23nC)

* Low Reverse transfer capacitances(Typical:8pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circu

CS10N40A4R-CRMicro.pdf