CS10N045AE-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS10N045 AE-G General .
CS10N045 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

📥 Download Datasheet

CS10N045AE-G Datasheet Preview — Preview of CS10N045AE-G PDF

Datasheet Specifications

Part number: CS10N045AE-G
Manufacturer: CR Micro
File Size: 536.21 KB
Datasheet: CS10N045AE-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

CS10N045AE-G Distributors

📁 Related Datasheet

CS10N50A8R CS10N50FA9R CS10N60A8HD CS10N60A8R CS10N60F CS10N60FA9HD

📌 All Tags

CS10N045AE-G Silicon N-Channel Power MOSFET CR Micro

CR Micro CS10N045AE-G-like datasheet