* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W PD(Tc=25℃) 50 W TJ,TSTG -55 to 150 ℃ /Electr
CS10N60F Datasheet (275.53 KB)
CS10N60F
BLUE ROCKET ELECTRONICS
275.53 KB
N-channel mosfet.
BRF10N60(CS10N60F)
N-CHANNEL MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and s.
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