CS10N60A0R - Silicon N-Channel Power MOSFET
VDSS 600 CS10N60 A0R, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 130 which reduce the conduction loss, improve switching RDS(ON)Typ 0.68 performance and enhance the avalanche energy.
The transistor can be used in various
CS10N60A0R Features
* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge (Typical Data:32nC)
* Low Reverse transfer capacitances(Typical:7.5pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise
