CS10N15A3 - Silicon N-Channel Power MOSFET
CS10N15 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and high
CS10N15A3 Features
* Fast Switching
* Low ON Resistance(Rdson≤300mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 10 A 36.7 W 230 mΩ Absolute（TC= 25℃
