CS10N60A8R Datasheet, Mosfet, Huajing Microelectronics

CS10N60A8R Features

• Mosfet l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typi

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CS10N60A8R

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS10N60A8R Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS10N60A8R

Huajing Microelectronics

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