CS10N60A8R Datasheet - Huajing Microelectronics

CS10N60A8R Silicon N-Channel Power MOSFET

CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS10N60A8R Features

* l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Ab

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