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CS10N65FA9HD

Silicon N-Channel Power MOSFET

CS10N65FA9HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R

CS10N65FA9HD General Description

CS10N65F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 10 50 0.65 switching performance and enhance the avalanche energy. The transistor can be used in various power .

CS10N65FA9HD Datasheet (350.67 KB)

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Datasheet Details

Part number:

CS10N65FA9HD

Manufacturer:

Huajing Microelectronics

File Size:

350.67 KB

Description:

Silicon n-channel power mosfet.

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