CS10N65FA9HD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS10N65FA9HD
Manufacturer: Huajing Microelectronics
File Size: 350.67 KB
Datasheet: CS10N65FA9HD-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS10N65FA9HD Product details

Description

CS10N65F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 10 50 0.65 switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test.

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