CS10N65FA9R Datasheet - Huajing Microelectronics

CS10N65FA9R Silicon N-Channel Power MOSFET

CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS10N65FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤1.0Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS10N65FA9R-HuajingMicroelectronics.pdf