Datasheet Details
- Part number
- CS10N06BE-G
- Manufacturer
- CR Micro
- File Size
- 680.90 KB
- Datasheet
- CS10N06BE-G-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
CS10N06 BE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications..The package form is SOP-8, which accords with the RoHS standard.
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