CS10N06BE-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS10N06 BE-G General .
CS10N06 BE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improv.

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Datasheet Specifications

Part number: CS10N06BE-G
Manufacturer: CR Micro
File Size: 680.90 KB
Datasheet: CS10N06BE-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤16 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

CS10N06BE-G Distributors

📁 Related Datasheet

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CS10N06BE-G Silicon N-Channel Power MOSFET CR Micro

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