CS10N60FA9R Datasheet, Mosfet, Huajing Microelectronics

CS10N60FA9R Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Appl

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CS10N60FA9R

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS10N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduc

CS10N60FA9R Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS10N60FA9R

Huajing Microelectronics

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