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CS10N15A4 Datasheet - CR Micro

CS10N15A4 Silicon N-Channel Power MOSFET

CS10N15 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS10N15A4 Features

* Fast Switching

* Low ON Resistance(Rdson≤300mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 150 V 10 A 36.7 W 230 mΩ Absolute（TC= 25℃

CS10N15A4-CRMicro.pdf

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Datasheet Details

Part number:

CS10N15A4

Manufacturer:

CR Micro

File Size:

564.04 KB

Description:

Silicon n-channel power mosfet.

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CS10N15A4 CS10N15A4 Silicon N-Channel Power MOSFET CR Micro

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