CS10N65ARR-G - Silicon N-Channel Power MOSFET
CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and h
CS10N65ARR-G Features
* Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω
* Low ON Resistance(Rdson≤1.0Ω)
* Low Gate Charge (Typical Data:32nC)
* Low Reverse transfer capacitances(Typical:7pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circui
