CS10N65ARR-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS10N65 ARR-G General .
CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS10N65ARR-G
Manufacturer: CR Micro
File Size: 453.88 KB
Datasheet: CS10N65ARR-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 10 A 130 W 0.86 Ω
* Low ON Resistance(Rdson≤1.0Ω)
* Low Gate Charge (Typical Data:32nC)
* Low Reverse transfer capacitances(Typical:7pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

CS10N65ARR-G Distributors

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CS10N65ARR-G Silicon N-Channel Power MOSFET CR Micro

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