* Super high dense cell design for low R ，DS(on) Rugged and reliable，surface mount package，ESD protected. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDS ID(Tc=25℃) ID(Tc=70℃) IDM VGS EAS PD(Tc=25℃) PD(Tc=70℃) TJ,TSTG -60 -18 -14.5 -50 ±20 36 42 27 -55 to 150 V A A A V mJ W W ℃ /
CS18P06D Datasheet (319.87 KB)
CS18P06D
BLUE ROCKET ELECTRONICS
319.87 KB
P-channel mosfet.
BRD18P06(CS18P06D)
P-CHANNEL MOSFET/P MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and s.
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