* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.4 A IDM 48 A VGSS ±30 V EAS 870 mJ EAR 22.5 mJ IAR 12 A PD(Tc=25℃) 225 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
CS12N60
BLUE ROCKET ELECTRONICS
239.01 KB
N-channel mosfet.
BR12N60(CS12N60)
N-CHANNEL MOSFET/N MOS
: ， PFC 。
Purpose: These devices are well suited for high efficient switched mode power supplies,active p.
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