CS12N60FA9H Datasheet - Huajing Microelectronics

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CS12N60FA9H Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS12N60F A9H General .
CS12N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve s.

CS12N60FA9H-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS12N60FA9H

Manufacturer:

Huajing Microelectronics

File Size:

192.84 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol

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CS12N60FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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