CS12N60A8R Datasheet, Mosfet, Huajing Microelectronics

CS12N60A8R Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Appl

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CS12N60A8R

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS12N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

CS12N60A8R Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS12N60A8R

Huajing Microelectronics

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