CS12N60A8R - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS12N60A8R Datasheet Preview — Preview of CS12N60A8R PDF

Datasheet Details

Part number	CS12N60A8R
Manufacturer	Huajing Microelectronics
File Size	266.26 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS12N60A8R-HuajingDiscreteDevices.pdf

CS12N60A8R Product details

Description

CS12N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |