Part number:
CS12N65FA9H
Manufacturer:
Huajin Discrete Devices
File Size:
222.35 KB
Description:
Silicon n-channel power mosfet.
CS12N65FA9H-HuajinDiscreteDevices.pdf
Datasheet Details
Part number:
CS12N65FA9H
Manufacturer:
Huajin Discrete Devices
File Size:
222.35 KB
Description:
Silicon n-channel power mosfet.
CS12N65FA9H, Silicon N-Channel Power MOSFET
CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS12N65FA9H Features
* l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parame
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