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CS12N65FA9H

Silicon N-Channel Power MOSFET

CS12N65FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS12N65FA9H General Description

CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS12N65FA9H Datasheet (222.35 KB)

Preview of CS12N65FA9H PDF

Datasheet Details

Part number:

CS12N65FA9H

Manufacturer:

Huajin Discrete Devices

File Size:

222.35 KB

Description:

Silicon n-channel power mosfet.

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CS12N65FA9H Silicon N-Channel Power MOSFET Huajin Discrete Devices

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