CS12N65FA9H Datasheet, Mosfet, Huajin Discrete Devices

CS12N65FA9H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Appli

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CS12N65FA9H

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Huajin Discrete Devices

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduc

CS12N65FA9H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS12N65FA9H

Huajin Discrete Devices

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