CS12N65A8H

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS12N65A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS12N65A8H General Description

CS12N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 12 140 0.54 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS12N65A8H Datasheet (345.54 KB)

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CS12N65A8H

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Huajing Microelectronics

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345.54 KB

Description:

Silicon n-channel power mosfet.

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CS12N65A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS12N65A8H Features

CS12N65A8H General Description

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