CS12N70FA9R-G Datasheet - CR Micro

CS12N70FA9R-G Silicon N-Channel Power MOSFET

CS12N70F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio.

CS12N70FA9R-G Features

* l Fast Switching l Low ON Resistance(Rdson≤0.85Ω) l Low Gate Charge (Typical Data:38nC) l Low Reverse transfer capacitances(Typical:6.9pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified

CS12N70FA9R-G-CRMicro.pdf