CS120N06A0 - Silicon N-Channel Power MOSFET
CS120N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 60 1
CS120N06A0 Features
* l Fast Switching l Low ON Resistance(Rdson≤6.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:217pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa
