CS120N10AR - Silicon N-Channel Power MOSFET
CS120N10 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher effi
CS120N10AR Features
* VDSS ID PD(TC=25℃) RDS(ON)Typ 100 V 120 A 198 W 7.5 mΩ l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer capacitances(Typical:311pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and cha
