CS120N06C8 Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS120N06 C8 General .
CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching.

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Datasheet Specifications

Part number: CS120N06C8
Manufacturer: CR Micro
File Size: 373.79 KB
Datasheet: CS120N06C8-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single P

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📁 Related Datasheet

CS120 CS120-2 CS1200L CS1205 CS1206 CS12-02N-1

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CS120N06C8 Silicon N-Channel Power MOSFET CR Micro

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