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CS120N10A8 Datasheet - CR Micro

CS120N10A8 - Silicon N-Channel Power MOSFET

CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor VDSS 100 V ID(Silicon limited Current) 120 A ID(Package limited Current) 120 A

CS120N10A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer capacitances(Typical:311pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol P

CS120N10A8-CRMicro.pdf

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Datasheet Details

Part number:

CS120N10A8

Manufacturer:

CR Micro

File Size:

310.09 KB

Description:

Silicon n-channel power mosfet.

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