CS120N10A8 - Silicon N-Channel Power MOSFET
CS120N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor VDSS 100 V ID(Silicon limited Current) 120 A ID(Package limited Current) 120 A
CS120N10A8 Features
* l Fast Switching l Low ON Resistance(Rdson≤9.5mΩ) l Low Gate Charge (Typical Data:108nC) l Low Reverse transfer capacitances(Typical:311pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol P
