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CS12N60A8HD

Silicon N-Channel Power MOSFET

CS12N60A8HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter V

CS12N60A8HD General Description

CS12N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS12N60A8HD Datasheet (355.62 KB)

Preview of CS12N60A8HD PDF

Datasheet Details

Part number:

CS12N60A8HD

Manufacturer:

Huajing Microelectronics

File Size:

355.62 KB

Description:

Silicon n-channel power mosfet.

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CS12N60A8HD Silicon N-Channel Power MOSFET Huajing Microelectronics

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