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CS12N60FA9R

Silicon N-Channel Power MOSFET

CS12N60FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:40nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS12N60FA9R General Description

CS12N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS12N60FA9R Datasheet (269.62 KB)

Preview of CS12N60FA9R PDF

Datasheet Details

Part number:

CS12N60FA9R

Manufacturer:

Huajing Microelectronics

File Size:

269.62 KB

Description:

Silicon n-channel power mosfet.

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CS12N60FA9R Silicon N-Channel Power MOSFET Huajing Microelectronics

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