CS12N80FA9RD Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS12N80F A9RD General .
VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 41.

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Datasheet Specifications

Part number: CS12N80FA9RD
Manufacturer: CR Micro
File Size: 602.75 KB
Datasheet: CS12N80FA9RD-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances

Applications

* LED power supply and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 dv/dt a3 Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse A

CS12N80FA9RD Distributors

📁 Related Datasheet

CS12N60 CS12N60A8H CS12N60A8HD CS12N60A8R CS12N60FA9H CS12N60FA9HD

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CS12N80FA9RD Silicon N-Channel Power MOSFET CR Micro

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