CS12N80FA9RD - Silicon N-Channel Power MOSFET
VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 41 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.75 Ω performance and enhance the avalanche energy.
The transistor can be us
CS12N80FA9RD Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： LED power supply and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage
