CS12N80FA9RD Datasheet - CR Micro

CS12N80FA9RD Silicon N-Channel Power MOSFET

VDSS 800 V CS12N80F A9RD, the silicon N-channel Enhanced ID 12 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 41 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.75 Ω performance and enhance the avalanche energy. The transistor can be us.

CS12N80FA9RD Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： LED power supply and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage

CS12N80FA9RD-CRMicro.pdf