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CS12N60FA9HD

Silicon N-Channel Power MOSFET

CS12N60FA9HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R

CS12N60FA9HD General Description

CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS12N60FA9HD Datasheet (353.81 KB)

Preview of CS12N60FA9HD PDF

Datasheet Details

Part number:

CS12N60FA9HD

Manufacturer:

Huajing Microelectronics

File Size:

353.81 KB

Description:

Silicon n-channel power mosfet.

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CS12N60FA9HD Silicon N-Channel Power MOSFET Huajing Microelectronics

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