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CS12N60FA9HD Datasheet - Huajing Microelectronics

CS12N60FA9HD - Silicon N-Channel Power MOSFET

CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switching performance and enhance the avalanche energy.

The transistor can be used in various power s

CS12N60FA9HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter R

CS12N60FA9HD-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS12N60FA9HD

Manufacturer:

Huajing Microelectronics

File Size:

353.81 KB

Description:

Silicon n-channel power mosfet.

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