CS12N60FA9HD Datasheet - Huajing Microelectronics

CS12N60FA9HD Silicon N-Channel Power MOSFET

CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS12N60FA9HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R

CS12N60FA9HD-HuajingMicroelectronics.pdf