CS12N05AEP-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Trench MOSFET ○R CS12N05 AEP-G General .
VDSS 45 V CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID 12 A obtained by advanced trench Technology which reduce the PD(TC=2.

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Datasheet Specifications

Part number: CS12N05AEP-G
Manufacturer: CR Micro
File Size: 1.02 MB
Datasheet: CS12N05AEP-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance (Rdson≤15mΩ)
* Low Reverse transfer capacitances(Typical:115pF)
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanc

CS12N05AEP-G Distributors

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CS12N05AEP-G Silicon N-Channel Power MOSFET CR Micro

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