CS12N05AEP-G - Silicon N-Channel Power MOSFET
VDSS 45 V CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is ID 12 A obtained by advanced trench Technology which reduce the PD(TC=25℃) 3.1 W conduction loss, improve switching performance and RDS(ON)Typ (VGS=10V) 11 mΩ enhance the avalanche energy.
The transistor can be use
CS12N05AEP-G Features
* Fast Switching
* Low ON Resistance (Rdson≤15mΩ)
* Low Reverse transfer capacitances(Typical:115pF)
* 100% Single Pulse avalanche energy Test
* Halogen free Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol P
